???????????????????????????????? SSF80100 ? ? silikron semiconductor co.,ltd. 2014.10.20 version : 1.0 page 1 of 8 www.silikron.com ? main product characteristics: features and benefits: description: absolute max rating: symbol parameter max. units i d @ tc = 25c continuous drain current, v gs @ 10v 80 a i d @ tc = 100c continuous drain current, v gs @ 10v 70 i dm pulsed drain current 320 p d @tc = 25c power dissipation 200 w linear derating factor 2.0 w/c v ds drain-source voltage 75 v v gs gate-to-source voltage 20 v e as single pulse avalanche energy @ l=0.3mh 375 mj i as avalanche current @ l=0.3mh 50 a t j t stg operating junction and storage te mperature range -55 to + 175 c v dss 75v r ds (on) 8m ? (typ.) i d 80a to220 ? schematic diagram ? ? advanced mosfet process technology ? special designed for motor control, pwm, load switching etc. ? ultra low on-resistance with low gate charge ? excellent qgd/qgs rating ? fast switching and reverse body recovery ? 175 operating temperature ? ? ? it utilizes the latest processing tec hniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. thes e features combine to make this des ign an extremely efficient and reliable device for use in power switching application, moto r control and a wide variety of other applications. ? marking and pin assignment ?
???????????????????????????????? SSF80100 ? ? silikron semiconductor co., ltd. 2014.10.20 version: 1.0 page 2 of 8 www.silikron.com ? thermal resistance symbol characterizes typ. max. units r jc junction-to-case ? 0.75 /w r ja junction-to-ambient ( t 10s) ? 62 /w junction-to-ambient (pcb mounted, steady-state) ? 40 /w electrical characterizes @t a =25 unless otherwise specified symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 75 ? ? v v gs = 0v, id = 250 a r ds(on) static drain-to-source on-resistance ? 8 10 m ? v gs =10v,i d = 30a ? 14.9 ? t j = 125 v gs(th) gate threshold voltage 2 ? 4 v v ds = v gs , i d = 250 a ? 2.11 ? t j = 125 i dss drain-to-source leakage current ? ? 1 a v ds = 75v,v gs = 0v ? ? 50 t j = 125 i gss gate-to-source forward leakage ? ? ? ? 100 na v gs =20v ? ? ? ? -100 v gs = -20v q g total gate charge ? ? 73 ? nc i d = 30a, v ds =30v, v gs = 10v q gs gate-to-source charge ? ? 29 ? q gd gate-to-drain("miller") charge ? ? 23 ? t d(on) turn-on delay time ? ? 19 ? ns v gs =10v, vds=30v, r l =15 ? , r gen =2.5 ? t r rise time ? ? 18 ? t d(off) turn-off delay time ? ? 56 ? t f fall time ? ? 24 ? c iss input capacitance ? ? 4308 ? pf v gs = 0v v ds = 25v ? = 1mhz c oss output capacitance ? ? 328 ? c rss reverse transfer capacitance ? ? 118 ? source-drain ratings and characteristics symbol parameter min. typ. max. units conditions i s continuous source current (body diode) ? ? 80 a mosfet symbol showing the integral reverse p-n junction diode. i sm pulsed source current (body diode) ? ? 320 a v sd diode forward voltage ? 0.88 1.3 v i s =30a, v gs =0v t rr reverse recovery time ? 36 ? ns t j = 25c, i f =75a, di/dt = 100a/ s q rr reverse recovery charge ? 50 ? nc ?
???????????????????????????????? SSF80100 ? ? silikron semiconductor co., ltd. 2014.10.20 version: 1.0 page 3 of 8 www.silikron.com ? test circuits and waveforms switch waveforms: notes : calculated continuous current based on maximum allowable junction temperature. package limitation current is 75a. repetitive rating; pulse width limit ed by max. junction temperature. the power dissipation pd is based on max. junction temperature, using junction-to-case thermal resistance. the value of r ja is measured with the devic e mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with ta =25c these curves are based on the junction-to-case thermal impedenc e which is measured with the device mounted to a large heatsink, assumi ng a maximum junction temperature of t j(max) =175c.
???????????????????????????????? SSF80100 ? ? silikron semiconductor co., ltd. 2014.10.20 version: 1.0 page 4 of 8 www.silikron.com ? typical electrical and thermal characteristics ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ?? figure 2. gate to source cut-off voltage figure 1: typical output characteristics ? figure 3. drain-to-source breakdown voltage vs. temperature figure 4: normalized on-resistance vs. case temperature ? ? ?
???????????????????????????????? SSF80100 ? ? silikron semiconductor co., ltd. 2014.10.20 version: 1.0 page 5 of 8 www.silikron.com ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? figure 5. maximum drain current vs. case temperature typical electrical and thermal characteristics ? figure 6.typical capacitance vs. drain-to-source voltage ? figure7. maximum effective transient thermal impedance, junction-to-case
???????????????????????????????? SSF80100 ? ? silikron semiconductor co., ltd. 2014.10.20 version: 1.0 page 6 of 8 www.silikron.com ? mechanical data min nom max min nom max a - 1.300 - - 0.051 - a1 2.200 2.400 2.600 0.087 0.094 0.102 b - 1.270 - - 0.050 - b1 1.270 1.370 1.470 0.050 0.054 0.058 c - 0.500 - - 0.020 - d - 15.600 - - 0.614 - d1 - 28.700 - - 1.130 - d2 - 9.150 - - 0.360 - e 9.900 10.000 10.100 0.390 0.394 0.398 e1 - 10.160 - - 0.400 - p - 3.600 - - 0.142 - p1 1.500 0.059 e l 12.900 13.100 13.300 0.508 0.516 0.524 ?1 - 7 0 -- 7 0 - ?2 - 7 0 -- 7 0 - ?3 - 3 0 - 5 0 7 0 9 0 ?4 - 3 0 - 1 0 3 0 5 0 symbol dimension in millimeters dimension in inches 2.54bsc 0.1bsc to220 package ? outline ? dimension_gn e d d1 p a 1 d2 a1 c e b b1 2 3 l 4 p1 e1
???????????????????????????????? SSF80100 ? ? silikron semiconductor co., ltd. 2014.10.20 version: 1.0 page 7 of 8 www.silikron.com ? ordering and marking information device marking: SSF80100 package (available) to220 operating temperature range c : -55 to 175 oc devices per unit package type units/ tube tubes/inner box units/inner box inner boxes/carton box units/carton box to220 50 20 1000 6 6000 reliability test program test item conditions duration sample size high temperature reverse bias(htrb) t j =125 to 175 @ 80% of max v dss /v ces /vr 168 hours 500 hours 1000 hours 3 lots x 77 devices high temperature gate bias(htgb) t j =150 or 175 @ 100% of max v gss 168 hours 500 hours 1000 hours 3 lots x 77 devices
???????????????????????????????? SSF80100 ? ? silikron semiconductor co., ltd. 2014.10.20 version: 1.0 page 8 of 8 www.silikron.com ? attention: any and all silikron products described or contained here in do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reason ably expected to result in serious physical and/or material damage. consult with your silikron representative nearest you bef ore using any silikron products described or contained herein in such applications. silikron assumes no responsibility for equipment failures t hat result from using product s at values that exceed, even momentarily, rated values (such as maximum rating s, operating condition ranges, or other parameters) listed in products specifications of any and all sili kron products described or contained herein. specifications of any and all silikron products described or contai ned herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functi ons of the described products as mounted in the customer?s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mount ed in the customer?s products or equipment. silikron semiconductor co.,ltd. strives to supply high- quality high-reliability prod ucts. however, any and all semiconductor products fail with some probability. it is possibl e that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt sa fety measures so that these kinds of accidents or events cannot occur. such measures incl ude but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all silik ron products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorit ies concerned in accordance with the above law. no part of this publication may be reproduced or transmi tted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information st orage or retrieval system, or otherwise, without the prior written permission of silikron semiconductor co.,ltd. information (including circuit diagrams and circuit param eters) herein is for example only ; it is not guaranteed for volume production. silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellect ual property rights or other rights of third parties. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing e quipment, refer to the "deliv ery specification" for the silikron product that you intend to use. this catalog provides information as of dec, 2008. specifications and information herein are subject to change without notice. customer service worldwide sales and service : sales@silikron.com technical support: technical@silikron.com suzhou silikron semiconductor corp. 11a, 428 xinglong street, suzhou industrial park, p.r.china tel: (86-512) 62560688 fax: (86-512) 65160705 e-mail: sales@silikron.com
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